Simulation and Analysis of a PN Junction

In this project, we utilized the Sentaurus TCAD tool to simulate PN junctions, focusing on the effects of different doping concentrations, built-in potential, and depletion width in a P-type silicon substrate with a higher concentration of donor dopings. Initially, we examined a uniform doping profile to understand the behavior of the junction under zero bias, forward bias, and reverse bias conditions, as well as the impact of temperature variations.

We then introduced a Gaussian doping profile to conduct a comparative analysis with the uniform profile. This allowed us to observe the variations in IV characteristics, built-in potential, and depletion width, providing a comprehensive understanding of the junction's behavior under various conditions and how different doping profiles influence these parameters.

If you would like to learn more about this project, a comprehensive report is available below.

Simulation of a PN Junction.pdf

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